国产亚洲第一伦理第一区

   生(sheng)產(chan)和生(sheng)活最常見的(de)(de)鉛蓄電(dian)池(chi)(chi)，可將電(dian)能(neng)通過化(hua)(hua)學反應儲藏(zang)起來，到(dao)另一(yi)個場合或另一(yi)時(shi)段使(shi)(shi)用(yong)(yong)。鉛蓄電(dian)池(chi)(chi)雖然造價較低，但(dan)也有(you)(you)相(xiang)應的(de)(de)弱(ruo)點(dian)，諸如能(neng)量(liang)轉換效(xiao)率(lv)(lv)較低、電(dian)池(chi)(chi)反復充放電(dian)易老化(hua)(hua)導致使(shi)(shi)用(yong)(yong)壽命短、比(bi)能(neng)量(liang)（Wh/kg）和比(bi)功率(lv)(lv)（W/kg）小使(shi)(shi)設備笨重、充電(dian)時(shi)間(jian)長等；現在(zai)我們在(zai)手機上(shang)使(shi)(shi)用(yong)(yong)的(de)(de)鋰離子電(dian)池(chi)(chi)，雖然也有(you)(you)許多優點(dian)，但(dan)它價格昂貴且儲藏(zang)電(dian)能(neng)有(you)(you)限，不能(neng)在(zai)大(da)功率(lv)(lv)場合下使(shi)(shi)用(yong)(yong)；所以正在(zai)開(kai)發研(yan)制的(de)(de)超(chao)級電(dian)容電(dian)池(chi)(chi)，相(xiang)比(bi)較而言，就(jiu)有(you)(you)著一(yi)般電(dian)池(chi)(chi)無(wu)可比(bi)擬(ni)的(de)(de)優點(dian)，它的(de)(de)前(qian)景不可限量(liang)。

    結構

    超級電(dian)(dian)(dian)容(rong)的(de)容(rong)量(liang)(liang)比通常的(de)電(dian)(dian)(dian)容(rong)器(qi)大得(de)多(duo)。由于(yu)其容(rong)量(liang)(liang)很大，對外表現和(he)電(dian)(dian)(dian)池(chi)相同(tong)，因此也稱作“電(dian)(dian)(dian)容(rong)電(dian)(dian)(dian)池(chi)”或說“黃金電(dian)(dian)(dian)池(chi)”。超級電(dian)(dian)(dian)容(rong)器(qi)電(dian)(dian)(dian)池(chi)也屬于(yu)雙(shuang)電(dian)(dian)(dian)層(ceng)電(dian)(dian)(dian)容(rong)器(qi),它是目前(qian)世界上已投入量(liang)(liang)產的(de)雙(shuang)電(dian)(dian)(dian)層(ceng)電(dian)(dian)(dian)容(rong)器(qi)中容(rong)量(liang)(liang)最(zui)大的(de)一種(zhong),其基本(ben)原理和(he)其它種(zhong)類的(de)雙(shuang)電(dian)(dian)(dian)層(ceng)電(dian)(dian)(dian)容(rong)器(qi)一樣,都(dou)是利用(yong)活(huo)性(xing)炭多(duo)孔電(dian)(dian)(dian)極和(he)電(dian)(dian)(dian)解質(zhi)組(zu)成的(de)雙(shuang)電(dian)(dian)(dian)層(ceng)結構(gou)獲得(de)超大的(de)容(rong)量(liang)(liang)。

    傳統物理電(dian)容中儲(chu)存(cun)的(de)(de)(de)(de)(de)(de)電(dian)能來源于電(dian)荷在兩塊(kuai)極(ji)板(ban)上的(de)(de)(de)(de)(de)(de)分離,兩塊(kuai)極(ji)板(ban)之(zhi)間為(wei)(wei)(wei)(wei)真空(kong)(相(xiang)對介(jie)電(dian)常(chang)數為(wei)(wei)(wei)(wei)1)或一層(ceng)介(jie)電(dian)物質(相(xiang)對介(jie)電(dian)常(chang)數為(wei)(wei)(wei)(wei)ε)所隔(ge)離,電(dian)容值為(wei)(wei)(wei)(wei):C = ε·A / 3.6 πd ·10-6 (μF) 其(qi)中A為(wei)(wei)(wei)(wei)極(ji)板(ban)面(mian)積,d為(wei)(wei)(wei)(wei)介(jie)質厚度。所儲(chu)存(cun)的(de)(de)(de)(de)(de)(de)能量(liang)(liang)為(wei)(wei)(wei)(wei): E = C (ΔV)2/2，其(qi)中C為(wei)(wei)(wei)(wei)電(dian)容值,ΔV為(wei)(wei)(wei)(wei)極(ji)板(ban)間的(de)(de)(de)(de)(de)(de)電(dian)壓降.可見,若想(xiang)獲(huo)得較大的(de)(de)(de)(de)(de)(de)電(dian)容量(liang)(liang),儲(chu)存(cun)更多(duo)的(de)(de)(de)(de)(de)(de)能量(liang)(liang),必須增大面(mian)積A或減少介(jie)質厚度d，但(dan)這(zhe)個(ge)伸(shen)縮空(kong)間有限(xian)，導致它的(de)(de)(de)(de)(de)(de)儲(chu)電(dian)量(liang)(liang)和(he)儲(chu)能量(liang)(liang)較小。

    工作原理

    雙電(dian)(dian)(dian)(dian)(dian)(dian)層(ceng)(ceng)電(dian)(dian)(dian)(dian)(dian)(dian)容(rong)(rong)(rong)器(qi)中,采用(yong)活(huo)性(xing)炭材料(liao)制作(zuo)成(cheng)(cheng)多孔電(dian)(dian)(dian)(dian)(dian)(dian)極(ji)(ji),同(tong)時(shi)在(zai)(zai)相對的(de)(de)(de)(de)(de)(de)(de)碳(tan)多孔電(dian)(dian)(dian)(dian)(dian)(dian)極(ji)(ji)之間充(chong)填電(dian)(dian)(dian)(dian)(dian)(dian)解(jie)質(zhi)溶液(ye),當在(zai)(zai)兩端施加(jia)電(dian)(dian)(dian)(dian)(dian)(dian)壓時(shi),相對的(de)(de)(de)(de)(de)(de)(de)多孔電(dian)(dian)(dian)(dian)(dian)(dian)極(ji)(ji)上(shang)分別(bie)(bie)聚(ju)(ju)集(ji)正(zheng)負(fu)(fu)電(dian)(dian)(dian)(dian)(dian)(dian)子(zi),而電(dian)(dian)(dian)(dian)(dian)(dian)解(jie)質(zhi)溶液(ye)中的(de)(de)(de)(de)(de)(de)(de)正(zheng)負(fu)(fu)離(li)子(zi)將由(you)(you)于電(dian)(dian)(dian)(dian)(dian)(dian)場(chang)作(zuo)用(yong)分別(bie)(bie)聚(ju)(ju)集(ji)到與正(zheng)負(fu)(fu)極(ji)(ji)板相對的(de)(de)(de)(de)(de)(de)(de)界面(mian)上(shang),從(cong)(cong)而形成(cheng)(cheng)兩個集(ji)電(dian)(dian)(dian)(dian)(dian)(dian)層(ceng)(ceng),相當于兩個電(dian)(dian)(dian)(dian)(dian)(dian)容(rong)(rong)(rong)器(qi)串(chuan)聯(lian),由(you)(you)于活(huo)性(xing)碳(tan)材料(liao)具(ju)有(you)≥1200m2/g的(de)(de)(de)(de)(de)(de)(de)超高比表面(mian)積(ji)(即獲得了(le)極(ji)(ji)大(da)的(de)(de)(de)(de)(de)(de)(de)電(dian)(dian)(dian)(dian)(dian)(dian)極(ji)(ji)面(mian)積(ji)A),而且(qie)電(dian)(dian)(dian)(dian)(dian)(dian)解(jie)液(ye)與多孔電(dian)(dian)(dian)(dian)(dian)(dian)極(ji)(ji)間的(de)(de)(de)(de)(de)(de)(de)界面(mian)距離(li)不到1nm(即獲得了(le)極(ji)(ji)小的(de)(de)(de)(de)(de)(de)(de)介質(zhi)厚(hou)度d),根據(ju)前面(mian)的(de)(de)(de)(de)(de)(de)(de)計(ji)算公式可(ke)以看出(chu),這種雙電(dian)(dian)(dian)(dian)(dian)(dian)層(ceng)(ceng)電(dian)(dian)(dian)(dian)(dian)(dian)容(rong)(rong)(rong)器(qi)比傳統的(de)(de)(de)(de)(de)(de)(de)物(wu)理(li)電(dian)(dian)(dian)(dian)(dian)(dian)容(rong)(rong)(rong)的(de)(de)(de)(de)(de)(de)(de)容(rong)(rong)(rong)值要(yao)大(da)很多,比容(rong)(rong)(rong)量可(ke)以提高100倍(bei)以上(shang), 從(cong)(cong)而使(shi)單位重量的(de)(de)(de)(de)(de)(de)(de)電(dian)(dian)(dian)(dian)(dian)(dian)容(rong)(rong)(rong)量可(ke)達100F/g，并且(qie)電(dian)(dian)(dian)(dian)(dian)(dian)容(rong)(rong)(rong)的(de)(de)(de)(de)(de)(de)(de)內阻還能保持在(zai)(zai)很低的(de)(de)(de)(de)(de)(de)(de)水平，碳(tan)材料(liao)還具(ju)有(you)成(cheng)(cheng)本(ben)低，技術成(cheng)(cheng)熟等優點。從(cong)(cong)而使(shi)利用(yong)電(dian)(dian)(dian)(dian)(dian)(dian)容(rong)(rong)(rong)器(qi)進行(xing)大(da)電(dian)(dian)(dian)(dian)(dian)(dian)量的(de)(de)(de)(de)(de)(de)(de)儲能成(cheng)(cheng)為可(ke)能，且(qie)在(zai)(zai)實際使(shi)用(yong)時(shi)，可(ke)以通過(guo)串(chuan)聯(lian)或者并聯(lian)以提高輸出(chu)電(dian)(dian)(dian)(dian)(dian)(dian)壓或電(dian)(dian)(dian)(dian)(dian)(dian)流。